6372 Mosfet

Type Designator: FDP8880

Type of Transistor: MOSFET

Report 6372 It is further noted that, in either mode, the protective jumper between the common source and the common bias must be removed after installation in the cryostat. This jumper is provided to protect the amplifier MOSFET gates against excess static charge during handling. Use STMicroelectronics' STB55NF06LT4 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 95000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device utilizes stripfet ii technology. Sparesale Com - Offering Generic Black MOSFET AON 7752 7934 6970 6780 1448 7410 6426 7506 7400 7403 6372 at Rs 109/piece in Pune, Maharashtra. Read about company. Get contact details and address. TME has over 1000 employees, who provide expert support at each stage of the ordering process. Our offer includes 400,000 electronic components from 1200 producers. Since 1990, we have been expanding our operations dynamically and increasing our global potential. Every day, we send 5000 shipments and we ensure that they arrive in the shortest time available. Transistor MOSFET Array Dual N-CH 30V 8.1A 8-Pin SOIC T/R. Click image to enlarge. Manufacturer: Infineon. Product Category: Discretes, Transistors, MOSFET Arrays. Avnet Manufacturer Part #: IRL6372TRPBF. Secondary Manufacturer Part #: SP001569038 Compare.

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 55 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 54 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 22 nC

Maximum Drain-Source On-State Resistance (Rds): 0.0116 Ohm

Package: TO220

FDP8880 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

FDP8880 Datasheet (PDF)

0.1. fdp8880 fdb8880.pdf Size:696K _fairchild_semi

0May 2008tmMFDP8880 / FDB8880N-Channel PowerTrench MOSFET30V, 54A, 11.6mGeneral DescriptionFeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 14.5m, VGS = 4.5V, ID = 40Aimprove the overall efficiency of DC/DC converters usingeither synchronous or conventional switching PWM rDS(ON) = 11.6m, VGS = 10V, ID = 40Acontrollers. It has been op

0.2. fdp8880.pdf Size:283K _inchange_semiconductor

isc N-Channel MOSFET Transistor FDP8880FEATURESWith TO-220 packagingDrain Source Voltage-: V 30VDSSStatic drain-source on-resistance:RDS(on) 116m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

9.1. fdp8870 f085.pdf Size:337K _fairchild_semi

July 2010FDP8870_F085N-Channel PowerTrench MOSFET30V, 156A, 4.1mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 4.1m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 4.6m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been optimized fo

9.2. fdp8896.pdf Size:470K _fairchild_semi

NMay 2008tmMFDP8896N-Channel PowerTrench MOSFET30V, 92A, 5.9mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 5.9m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 7.0m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been optimized f

9.3. fdp8878.pdf Size:250K _fairchild_semi

November 2005FDP8878N-Channel Logic Level PowerTrench MOSFET 30V, 40A, 15mGeneral Descriptions Features rDS(ON) = 15m, VGS = 10V, ID = 40AThis N-Channel MOSFET has been designed specifically to rDS(ON) = 19m, VGS = 4.5V, ID = 36Aimprove the overall efficiency of DC/DC converters using High performance trench technology for extremely low either synchronous or con

9.4. fdp8874.pdf Size:469K _fairchild_semi

NMay 2008tmMFDP8874N-Channel PowerTrench MOSFET30V, 114A, 5.3mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 5.3m, VGS = 10V, ID = 40Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 6.6m, VGS = 4.5V, ID = 40Aeither synchronous or conventional switching PWMcontrollers. It has been optimized

9.5. fdp8876.pdf Size:308K _fairchild_semi

November 2005FDP8876N-Channel PowerTrench MOSFET 30V, 71A, 8.5mGeneral Descriptions Features rDS(ON) = 8.5m, VGS = 10V, ID = 40AThis N-Channel MOSFET has been designed specifically to rDS(ON) = 10.3m, VGS = 4.5V, ID = 40Aimprove the overall efficiency of DC/DC converters using High performance trench technology for extremely low either synchronous or conventiona

9.6. fdp8860.pdf Size:323K _fairchild_semi

September 2006FDP8860tmN-Channel PowerTrench MOSFET 30V, 80A, 2.5mFeatures General Description Max rDS(on) = 2.5m at VGS = 10V, ID = 80AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either Max rDS(on) = 2.9m at VGS = 4.5V, ID = 80Asynchronous or conventional switching PWM controllers. It has Lo

9.7. fdp8870.pdf Size:463K _fairchild_semi

eMay 2008FDP8870 tmMN-Channel PowerTrench MOSFET30V, 156A, 4.1mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 4.1m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 4.6m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been optimized f

9.8. fdp8896.pdf Size:284K _inchange_semiconductor

isc N-Channel MOSFET Transistor FDP8896FEATURESWith TO-220 packagingDrain Source Voltage-: V 30VDSSStatic drain-source on-resistance:RDS(on) 59m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

9.9. fdp8874.pdf Size:283K _inchange_semiconductor

isc N-Channel MOSFET Transistor FDP8874FEATURESWith TO-220 packagingDrain Source Voltage-: V 30VDSSStatic drain-source on-resistance:RDS(on) 53m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

9.10. fdp8860.pdf Size:284K _inchange_semiconductor

6372 Mosfet Circuit

isc N-Channel MOSFET Transistor FDP8860FEATURESWith TO-220 packagingDrain Source Voltage-: V 30VDSSStatic drain-source on-resistance:RDS(on) 2.5m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

9.11. fdp8870.pdf Size:284K _inchange_semiconductor

isc N-Channel MOSFET Transistor FDP8870FEATURESWith TO-220 packagingDrain Source Voltage-: V 30VDSSStatic drain-source on-resistance:RDS(on) 41m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

Datasheet: FDP8870, STM101N, FDP8870_F085, STK900, FDP8874, STK801, FDP8876, STK600, 2N3824, STK400, FDP8896, STK103, FDP8N50NZ, FDPF10N50FT, FDPF10N50UT, FDPF10N60NZ, STM4472.

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6372 Mosfet Datasheet

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